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| FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET August 2007 FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET Features * 650V @TJ = 150C * Typ. Rds(on)=0.15 * Ultra low gate charge (typ. Qg=55nC) * Low effective output capacitance (typ. Coss.eff=110pF) * 100% avalanche tested SuperFET TM Description SuperFETTM is, Farichild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. D G GD S TO-247 FCH Series TO-3P G DS FCA Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed (Note 1) FCH20N60 600 FCA20N60 Unit V A A A V mJ A mJ V/ns W W/C C C 20 12.5 60 30 690 20 20.8 4.5 208 1.67 -55 to +150 300 Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds Thermal Characteristics Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ. -0.24 -- Max. 0.6 -41.7 Unit C/W C/W (c)2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FCH20N60 / FCA20N60 / FCA20N60_F109 Rev. A3 FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET Package Marking and Ordering Information Device Marking FCH20N60 FCA20N60 FCA20N60 Device FCH20N60 FCA20N60 FCA20N60_F109 Package TO-247 TO-3P TO-3PN Reel Size - Tape Width - Quantity 30 30 30 Electrical Characteristics Symbol Off Characteristics BVDSS BVDSS / TJ BVDS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd TC = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Conditions VGS = 0V, ID = 250A, TJ = 25C VGS = 0V, ID = 250A, TJ = 150C Min 600 -------- Typ -650 0.6 700 ----- Max Units ----1 10 100 -100 V V V/C V A A nA nA Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse ID = 250A, Referenced to 25C VGS = 0V, ID = 20A VDS = 600V, VGS = 0V VDS = 480V, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 10A VDS = 40V, ID = 10A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance 3.0 ---0.15 17 5.0 0.19 -V S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz VDS = 0V to 400V, VGS = 0V VDD = 300V, ID = 20A RG = 25 -----2370 1280 95 65 165 3080 1665 -85 -pF pF pF pF pF Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480V, ID = 20A VGS = 10V (Note 4, 5) (Note 4, 5) -------- 62 140 230 65 75 13.5 36 135 290 470 140 98 18 -- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 10A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 20A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 20A VGS = 0V, IS = 20A dIF/dt =100A/s (Note 4) ------ ---530 10.5 20 60 1.4 --- A A V ns C 2 FCH20N60 / FCA20N60 / FCA20N60_F109 Rev. A3 www.fairchildsemi.com FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 10 2 Figure 2. Transfer Characteristics 10 2 VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ID, Drain Current [A] ID , Drain Current [A] 10 1 10 1 150 C o 25 C -55 C 10 0 o o 10 0 * Notes : 1. 250s Pulse Test 2. TC = 25 C o * Note 1. VDS = 40V 2. 250s Pulse Test 10 -1 10 0 10 1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 10 2 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.4 0.3 RDS(ON) [], VGS = 10V IDR , Reverse Drain Current [A] Drain-Source On-Resistance 10 1 0.2 VGS = 20V 0.1 10 0 150 C o 25 C * Notes : 1. VGS = 0V 2. 250s Pulse Test o * Note : TJ = 25 C o 0.0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID, Drain Current [A] VSD , Source-Drain Voltage [V] Figure 5. Capacitance Characteristics 10000 Ciss = Cgs + Cgd (Cds = shorted) Figure 6. Gate Charge Characteristics 12 9000 8000 7000 Coss = Cds + Cgd VDS = 100V VGS, Gate-Source Voltage [V] Crss = Cgd 10 VDS = 250V VDS = 400V Capacitance [pF] 8 6000 5000 4000 3000 2000 1000 0 -1 10 Coss * Notes : 1. VGS = 0 V 2. f = 1 MHz 6 Ciss 4 Crss 2 * Note : ID = 20A 10 0 10 1 0 0 10 20 30 40 50 60 70 80 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 3 FCH20N60 / FCA20N60 / FCA20N60_F109 Rev. A3 www.fairchildsemi.com FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage Drain-Source On-Resistance 2.5 1.1 RDS(ON), (Normalized) 2.0 1.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 20 A 0.9 * Notes : 1. VGS = 0 V 2. ID = 250 A 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 25 10 2 Operation in This Area is Limited by R DS(on) 100 us 20 ID, Drain Current [A] 10 1 1 ms 10 ms DC ID, Drain Current [A] 3 15 10 0 10 10 -1 * Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o 5 10 -2 10 0 10 1 10 2 10 0 25 50 75 100 o 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve 10 0 ZJC(t), Thermal Response D = 0 .5 * N o te s : 1 . Z JC (t) = 0 .6 C /W M a x. o 10 -1 0 .2 0 .1 0 .0 5 0 .0 2 0 .0 1 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t) PDM t1 t2 s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] 4 FCH20N60 / FCA20N60 / FCA20N60_F109 Rev. A3 www.fairchildsemi.com FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 FCH20N60 / FCA20N60 / FCA20N60_F109 Rev. A3 www.fairchildsemi.com FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 FCH20N60 / FCA20N60 / FCA20N60_F109 Rev. A3 www.fairchildsemi.com FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET Mechanical Dimensions TO-247AD (FKS PKG CODE 001) Dimensions in Millimeters 7 FCH20N60 / FCA20N60 / FCA20N60_F109 Rev. A3 www.fairchildsemi.com FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET Mechanical Dimensions (Continued) TO-3P 15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 9.60 0.20 4.80 0.20 1.50 -0.05 +0.15 12.76 0.20 19.90 0.20 16.50 0.30 3.00 0.20 1.00 0.20 3.50 0.20 2.00 0.20 13.90 0.20 23.40 0.20 18.70 0.20 1.40 0.20 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] 0.60 -0.05 +0.15 Dimensions in Millimeters 8 FCH20N60 / FCA20N60 / FCA20N60_F109 Rev. A3 www.fairchildsemi.com FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET Mechanical Dimensions (Continued) TO-3PN Dimensions in Millimeters 9 FCH20N60 / FCA20N60 / FCA20N60_F109 Rev. A3 www.fairchildsemi.com FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) PDP-SPMTM Power220(R) Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production 10 FCH20N60 / FCA20N60 / FCA20N60_F109 Rev. A3 www.fairchildsemi.com |
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